TL750M SERIES

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SLVS021N – JANUARY 1988 – REVISED AUGUST 2010

TL750M10 ELECTRICAL CHARACTERISTICS

(1)

TL750M10

PARAMETER

TEST CONDITIONS

UNIT

MIN

TYP

MAX

9.9

10

10.1

Output voltage

V

9.8

10.2

15

43

Input voltage regulation

mV

20

75

Ripple rejection

50

55

dB

Output regulation voltage

30

100

mV

0.5

Dropout voltage

V

0.6

Output noise voltage

f = 10 Hz to 100 kHz

1000

mV

60

75

Bias current

mA

5

(1)

Pulse-testing techniques maintain the junction temperature as close to the ambient temperature as possible. Thermal effects must be

taken into account separately. All characteristics are measured with a 0.1-mF capacitor across the input and a 10-mF tantalum capacitor

on the output, with equivalent series resistance within the guidelines shown in Figure 1.

TL750M12 ELECTRICAL CHARACTERISTICS

(1)

TL750M12

PARAMETER

TEST CONDITIONS

UNIT

MIN

TYP

MAX

11.88

12

12.12

Output voltage

V

11.76

12.24

15

43

Input voltage regulation

mV

20

78

Ripple rejection

50

55

dB

Output regulation voltage

30

120

mV

0.5

Dropout voltage

V

0.6

Output noise voltage

f = 10 Hz to 100 kHz

1000

mV

60

75

Bias current

mA

5

(1)

Pulse-testing techniques maintain the junction temperature as close to the ambient temperature as possible. Thermal effects must be

taken into account separately. All characteristics are measured with a 0.1-mF capacitor across the input and a 10-mF tantalum capacitor

on the output, with equivalent series resistance within the guidelines shown in Figure 1.

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