Exposed

Pad

(Connect to GND)

15

14

13

12

11

1

2

3

4

5

10

9

8

7

6

16

17

18

19

20

ISET_S0

ISET_S3

ISET_V3P3

VHV

VHV

V3P3

RSVD

S0

V3P3OUT

V3P3

Exposed

Pad

(Connect to GND)

1

2

3

4

5

15

14

13

12

11

6

7

8

9

10

20

19

18

17

16

VHV

VHV

ISET_V3P3

ISET_S3

ISET_S0

RSVD

V3P3

V3P3

V3P3OUT

S0

BOTTOM VIEW

TOP VIEW / FOOTPRINT

TPS22980

SLVSB61B – DECEMBER 2011 – REVISED APRIL 2012

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ORDERING INFORMATION

PART NUMBER

PACKAGE MARKING

PACKAGE

DEVICE SPECIFIC FEATURES

TPS22980RGPR

PS22980

RGP

Tape and Reel

Package Size: 4mm x 4mm x 1mm height, Pad Pitch: 0.5mm

PIN FUNCTIONS

PIN

DESCRIPTION

NO.

NAME

1

2

GND

Device ground

3

4

5

EN

Device Enable.

6

VHV

High voltage power supply input. Place a minimum of 0.1µF capacitor as close to this pin as possible.

7

Sets the current limit for V3P3. Place resistor between this pin and GND. See Equation 1 to calculate resistor

8

ISET_V3P3

value.

Sets the current limit for VHV in S3 mode. Place resistor between this pin and GND. See Equation 1 to

9

ISET_S3

calculate resistor value.

Sets the current limit for VHV in S0 mode. Place resistor between this pin and GND. See Equation 1 to

10

ISET_S0

calculate resistor value.

11

HV_EN

High voltage output enable.

12, 14

OUT

Power output. Place a minimum of 1µF capacitor as close to this pin as possible.

13

GND

Device ground.

15

RSVD

Reserved. Must Tie to GND.

16

17

S0

When this pin is asserted, the device is put in S0 mode. Otherwise the device operates in S3 mode.

18

V3P3OUT

3.3V bypass output. Place a minimum of 0.1µF capacitor as close to this pin as possible.

19

V3P3

3.3V power supply input. Place a minimum of 0.1µF capacitor as close to this pin as possible.

20

EP

GND

2

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Product Folder Link(s) :TPS22980