1

Motorola Bipolar Power Transistor Device Data

Complementary Power

Darlingtons

For Isolated Package Applications

Designed for general–purpose amplifiers and switching applications, where the

mounting surface of the device is required to be electrically isolated from the heatsink

or chassis.

• Electrically Similar to the Popular TIP122 and TIP127

• 100 VCEO(sus)

• 5 A Rated Collector Current

• No Isolating Washers Required

• Reduced System Cost

• High DC Current Gain — 2000 (Min) @ IC = 3 Adc

• UL Recognized, File #E69369, to 3500 VRMS Isolation

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

100

Vdc

Collector–Base Voltage

VCB

100

Vdc

Emitter–Base Voltage

VEB

5

Vdc

RMS Isolation Voltage (1)

Test No. 1 Per Fig. 14

(for 1 sec, R.H. < 30%,

Test No. 2 Per Fig. 15

TA = 25_C)

Test No. 3 Per Fig. 16

VISOL

4500

3500

1500

VRMS

Collector Current — Continuous

Peak

IC

5

8

Adc

Base Current

IB

0.12

Adc

Total Power Dissipation* @ TC = 25_C

Derate above 25

_C

PD

30

0.24

Watts

W/

_C

Total Power Dissipation @ TA = 25_C

Derate above 25

_C

PD

2

0.016

Watts

W/

_C

Operating and Storage Junction Temperature Range

TJ, Tstg

– 65 to + 150

IC

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

R

θJA

62.5

_C/W

Thermal Resistance, Junction to Case*

R

θJC

4.1

_C/W

Lead Temperature for Soldering Purpose

TL

260

_C

* Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted on

a heatsink with thermal grease and a mounting torque of

≥ 6 in. lbs.

(1) Proper strike and creepage distance must be provided.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MF122/D

MJF122

MJF127

COMPLEMENTARY

SILICON

POWER DARLINGTONS

5 AMPERES

100 VOLTS

30 WATTS

NPN

PNP

CASE 221D–02

TO–220 TYPE