STP7401 datasheet(3/6 Pages) STANSON

Part #	STP7401

Description	STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

PDF	6 Pages

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Manufacturer	STANSON [Stanson Technology]

Direct Link	http://www.stansontech.com

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3 / 6 page

STP7401

P Channel Enhancement Mode MOSFET

-2.8A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

STP7401 2005. V1

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Condition

Min Typ Max

Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS=0V,ID=-250uA

-30

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250uA

-0.4

-1.0

Gate Leakage Current

IGSS

VDS=0V,VGS=±12V

100

VDS=-24V,VGS=0V

-1

Zero Gate Voltage Drain

Current

IDSS

VDS=-24V,VGS=0V

TJ=85℃

-5

On-State Drain Current

ID(on)

VDS≦-5V,VGS=-4.5V

-4.0

Drain-source On-Resistance

RDS(on)

VGS=-10V,ID=-2.8A

VGS=-4.5V,ID=-2.5A

VGS=-2.5V,ID=-1.5A

VGS=-1.8V,ID=-1.0A

105

125

155

210

115

135

170

240

mΩ

Forward Transconductance

gfs

VDS=-5V,ID=-4.0V

Diode Forward Voltage

VSD

IS=-1.0A,VGS=0V

-0.8 -1.2

Dynamic

Total Gate Charge

5.8

Gate-Source Charge

Qgs

0.8

Gate-Drain Charge

Qgd

VDS=-15V

VGS=-4.5V

ID≣-2.0A

1.5

Input Capacitance

Ciss

380

Output Capacitance

Coss

Reverse Transfer

Capacitance

Crss

VDS=-15V

VGS=0V

F=1MHz

Turn-On Time

td(on)

3.9

Turn-Off Time

td(off)

VDS=-15V

ID=-1A

RL=15Ω

RG=-3Ω

VGEN=-10V

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