SQJ960EP

www.vishay.com

Vishay Siliconix

S12-2275-Rev. C, 24-Sep-12

1

Document Number: 67017

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET

FEATURES

• AEC-Q101 Qualified

• Material categorization:



For definitions of compliance please see

www.vishay.com/doc?99912

Notes

a. Package limited.

b. Pulse test; pulse width

 300 μs, duty cycle  2 %.

c. When mounted on 1" square PCB (FR4 material).

result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to

ensure adequate bottom side solder interconnection..

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

PRODUCT SUMMARY

60

0.036

0.046

8

Configuration

Dual

4

3

2

1

6.15

mm

5.13

mm

Bottom View

D

2

D

1

N-Channel MOSFET

N-Channel MOSFET

ORDERING INFORMATION

Package

PowerPAK SO-8L

Lead (Pb)-free and Halogen-free

SQJ960EP-T1-GE3

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

60

V

Gate-Source Voltage

± 20

8

A

8

8

32

Single Pulse Avalanche Current

L = 0.1 mH

16

Single Pulse Avalanche Energy

12

mJ

34

W

11

Operating Junction and Storage Temperature Range

- 55 to + 175

°C

260

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

LIMIT

UNIT

Junction-to-Ambient

85

°C/W

Junction-to-Case (Drain)

4.3