SQJ960EP datasheet(4/9 Pages) VISHAY

4 / 9 page

SQJ960EP

www.vishay.com

Vishay Siliconix

S12-2275-Rev. C, 24-Sep-12

Document Number: 67017

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Gate Charge

Source Drain Diode Forward Voltage

Threshold Voltage

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Drain Source Breakdown vs. Junction Temperature

g -Total Gate Charge (nC)

D = 4.5 A

DS = 30 V

0.001

0.01

0.1

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

SD - Source-to-Drain Voltage (V)

J = 25 °C

J = 150 °C

-1.2

-0.9

-0.6

-0.3

0.0

0.3

0.6

- 50

- 25

100

125

150

175

J -Temperature (°C)

D = 250 μA

D = 5 mA

0.5

0.8

1.1

1.4

1.7

2.0

- 50

- 25

100

125

150

175

J - Junction Temperature (°C)

D = 5.3 A

GS = 4.5 V

GS = 10 V

0.00

0.05

0.10

0.15

0.20

0.25

02468

GS - Gate-to-Source Voltage (V)

J = 150 °C

J = 25 °C

- 50

- 25

100

125

150

175

J - Junction Temperature (°C)

D = 1 mA

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