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U1C Datasheet(PDF) 1 Page - Shenzhen Taychipst Electronic Co., Ltd

Part # U1C
Description  Surface Mount Ultrafast Plastic Rectifier
PDF  2 Pages
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Manufacturer  TAYCHIPST [Shenzhen Taychipst Electronic Co., Ltd]
Direct Link  http://www.taychipst.com
Logo TAYCHIPST - Shenzhen Taychipst Electronic Co., Ltd

U1C Datasheet(HTML) 1 Page - Shenzhen Taychipst Electronic Co., Ltd

  U1C Datasheet HTML 1Page - Shenzhen Taychipst Electronic Co., Ltd U1C Datasheet HTML 2Page - Shenzhen Taychipst Electronic Co., Ltd  
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Surface Mount Ultrafast Plastic Rectifier
U1B
THRU U1D
100V-200V
1.0A
Web Site: www.taychipst.com
1 of 2
FEATURES
E-mail: sales@taychipst.com
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Mechanical Data
• Oxide planar chip junction
• Ultrafast recovery time
• Low forward voltage, low power losses
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
• Oxide planar chip junction
• Ultrafast recovery time
• Low forward voltage, low power losses
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
U1B
U1C
U1D
UNIT
Device marking code
U1B
U1C
U1D
Maximum repetitive peak reverse voltage
VRRM
100
150
200
V
Maximum average forward rectified current (Fig. 1)
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Instantaneous forward voltage (1)
IF = 0.6 A
IF = 1.0 A
TA = 25 °C
VF
0.82
0.87
0.87
0.92
V
IF = 0.6 A
IF = 1.0 A
TA = 100 °C
0.71
0.76
0.78
0.84
Reverse current (2)
rated VR
TA = 25 °C
TA = 100 °C
IR
-
55
5.0
100
µA
Reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
TA = 25 °C
trr
-15
ns
IF = 0.6 A, dI/dt = 50 A/µs,
VR = 30 V, Irr = 0.1 IRM
TA = 25 °C
TA = 100 °C
trr
24
29
-
-
ns
Storage charge
IF = 0.6 A, dI/dt = 50 A/µs,
VR = 30 V, Irr = 0.1 IRM
TA = 25 °C
TA = 100 °C
Qrr
7
13
-
-
nC
Typical junction capacitance
4.0 V, 1 MHz
CJ
6.8
-
pF


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