TSM8N50CPROG datasheet(2/7 Pages) TSC

2 / 7 page

TSM8N50

500V N-Channel MOSFET

2/7

Version: A12

Electrical Specifications (Tc = 25

oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250uA

BVDSS

500

Drain-Source On-State Resistance

VGS = 10V, ID = 3.6A

RDS(ON)

0.7

0.85

Ω

Gate Threshold Voltage

VDS = VGS, ID = 250uA

VGS(TH)

2.0

3.0

4.0

Zero Gate Voltage Drain Current

VDS = 500V, VGS = 0V

IDSS

Gate Body Leakage

VGS = ±30V, VDS = 0V

IGSS

±100

Dynamic

(Note a)

Total Gate Charge

VDD = 400V, ID = 7A,

VGS = 10V

26.6

Gate-Source Charge

Qgs

5.4

Gate-Drain Charge

Qgd

6.82

Input Capacitance

VDS = 25V, VGS = 0V,

f = 1.0MHz

Ciss

1595

Output Capacitance

Coss

127.4

Reverse Transfer Capacitance

Crss

14.5

Switching

(Note a)

Turn-On Delay Time

VGS = 10V, ID = 7A,

VDD = 250V, RGEN = 9.1Ω

td(on)

Turn-On Rise Time

6.8

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

4.8

Source-Drain Diode Ratings and Characteristic

Source Current

Diode Forward Voltage

IS =7A, VGS = 0V

VSD

1.5

Note a: Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

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