TSM8N50

500V N-Channel MOSFET

1/7

Version: A12

TO-251

(IPAK)

TO-252

(DPAK)

PRODUCT SUMMARY

Ω)

500

7.2

Features

●

Low On-Resistance.

●

High power and current handing capability.

Ordering Information

Part No.

Package

Packing

TSM8N50CH C5G

TO-251

75pcs / Tube

TSM8N50CP ROG

TO-252

2.5Kpcs / 13” Reel

Note: “G” denotes for Halogen Free

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

500

V

Gate-Source Voltage

±30

V

Continuous Drain Current

Tc = 25ºC

7.2

A

Tc = 100ºC

4.3

A

Pulsed Drain Current

(Note 1)

28.8

A

Single Pulse Avalanche Energy

(Note 2)

181

mJ

89

W

Operating Junction Temperature

150

ºC

Storage Temperature Range

-55 to +150

Note1: Repetitive Rating : Pulse width limited by maximum junction temperature.

Thermal Performance

Parameter

Symbol

Limit

Unit

Thermal Resistance - Junction to Case

1.4

Thermal Resistance - Junction to Ambient

50

Pin Definition:

1. Gate

2. Drain

3. Source

Block Diagram

N-Channel MOSFET