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ASW215 Datasheet(PDF) 1 Page - Advanced Semiconductor Business Inc. |
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ASW215 Datasheet(HTML) 1 Page - Advanced Semiconductor Business Inc. |
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1 / 7 page ![]() 1/7 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 February 2010 ASW215 5-4000 MHz MMIC Amplifier Parameters Units Typical Frequency MHz 900 2000 3500 Gain dB 16 12 10 S11 dB -18 -15 -18 S22 dB -18 -18 -18 Output IP3 1) dBm 37 35 28 Noise Figure dB 3.8 4.3 4.8 Output P1dB dBm 19 19 16 Current mA 83 83 83 Device Voltage V 5 5 5 1) OIP3 is measured with two tones at an output power of +3 dBm/tone separated by 1 MHz. Parameters Units Min Typ Max Testing Frequency MHz 900 Gain dB 15 16 S11 dB -18 S22 dB -18 Output IP3 dBm 35 37 Noise Figure dB 3.8 4.0 Output P1dB dBm 18 19 Current mA 78 83 90 Device Voltage V 5 Parameters Rating Operating Case Temperature -40 to +85°C Storage Temperature -40 to +150°C Device Voltage +6 V Operating Junction Temperature +150°C Input RF Power (CW, 50ohm matched)* 25 dBm * Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf Features Description Typical Performance Absolute Maximum Ratings ·16 dB Gain at 900 MHz ·19 dBm P1dB at 900 MHz ·37 dBm Output IP3 at 900 MHz ·3.8 dB NF at 900 MHz ·MTTF > 100 Years ·Single Supply The ASW215, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both receiver and transmitter of telecommunication sys- tems up to 4 GHz. The amplifier is available in an SOT-89 package and passes through the stringent DC, RF, and reliability tests. Product Specifications ASW215 Package Style: SOT-89 Application Circuit ·5 ~ 42 MHz ·IF ·500 ~ 3500 MHz Pin Configuration Pin No. Function 1 RF IN 2 GND 3 RF OUT / Bias |
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