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2N5401HR Datasheet(PDF) 2 Page - STMicroelectronics |
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2N5401HR Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 10 page ![]() Electrical ratings 2N5401HR 2/10 Doc ID 16934 Rev 3 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) -160 V VCEO Collector-emitter voltage (IB = 0) -150 V VEBO Emitter-base voltage (IC = 0) -5 V IC Collector current for 2N5401HR for SOC5401HRB -0.6 -0.5 A A PTOT Total dissipation at Tamb ≤25 °C for 2N5401HR for SOC5401HRB for SOC5401HRB (1) Total dissipation at Tc ≤25 °C for 2N5401HR 1. When mounted on a 8x10x0.6 mm ceramic substrate. 0.36 0.36 0.58 1.2 W W W W TSTG Storage temperature -65 to 200 °C TJ Max. operating junction temperature 200 °C Table 3. Thermal data for through-hole package Symbol Parameter Value Unit RthJC RthJA Thermal resistance junction-case __ max Thermal resistance junction-ambient __ max 146 486 °C/W °C/W Table 4. Thermal data for SMD package Symbol Parameter Value Unit RthJA Thermal resistance junction-ambient __ max Thermal resistance junction-ambient (1) __ max 1. When mounted on a 8x10x0.6 mm ceramic substrate. 486 302 °C/W °C/W |
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