2N5401HR datasheet(3/10 Pages) STMICROELECTRONICS

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2N5401HR

Electrical characteristics

Doc ID 16934 Rev 3

3/10

Electrical characteristics

Tcase = 25 °C unless otherwise specified.

Table 5.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector-base cut-off

current (IE = 0)

VCB = -120 V

TC = 150 °C

-50

µA

IEBO

Emitter-base cut-off

current (IC = 0)

VEB = -3 V

-50

V(BR)CBO

Collector-base

breakdown voltage

(IE = 0)

IC = -100 µA

-160

V(BR)CEO

(1)

Pulsed duration = 300 µs, duty cycle

≤ 2 %

Collector-emitter

breakdown voltage

(IB = 0)

IC = -1 mA

-150

V(BR)EBO

Emitter-base

breakdown voltage

(IC = 0)

IE = -10 µA

-5

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = -10 mA

IB = -1 mA

IC = -50 mA

IB = -5 mA

-0.2

-0.5

VBE(sat)

(1)

Base-emitter

saturation voltage

IC = -10 mA

IB = -1 mA

IC = -50 mA

IB = -5 mA

-1

hFE

(1)

DC current gain

IC = -1 mA

VCE = -5 V

IC = -10 mA

VCE = -5 V

IC = -50 mA

VCE = -5 V

IC = -10 mA

VCE = -5 V

Tamb = -55 °C

240

hfe

Small signal current

gain

VCE = -10 V

IC = -10 mA

f = 10 kHz

Cobo

Output capacitance

(IE = 0)

VCB = -10 V

f = 1 MHz

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