Characteristics

BYW81HR

2/9

Doc ID 17735 Rev 1

1

Characteristics

Table 2.

Absolute maximum ratings

Symbol

Characteristic

Value

Unit

I

FSM

Variant 05

Variant 03 (per diode)

Variant 03 (per device)

1.

Sinusoidal pulse of 10 ms duration

2.

For variant 03 the “per device” ratings apply only when both cathode terminals are tied together.

250

250

500

A

3.

Pulsed, duration 5 ms, F = 50 Hz

200

V

Average output rectified current (50% duty cycle)(2)(4)

Variant 05

Variant 03 (per diode)

Variant 03 (per device)

4.

15

15

30

A

Forward rms current (per diode)(2)

Variant 05

Variant 03 (per diode)

Variant 03 (per device)

30

30

40

A

5.

inert atmosphere.

-55 to +150

°C

T

J

Junction temperature

+150

°C

Storage temperature range(5)

-55 to +150

°C

Soldering temperature

6.

Duration 10 seconds maximum at a distance of not less than 1.5 mm from the device body and the same

lead shall not be resoldered until 3 minutes have elapsed.

7.

Duration 5 seconds maximum the same package shall not be resoldered until 3 minutes have elapsed.

+260

+245

°C

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

(1)

1.

Package mounted on infinite heatsink.

Junction to case

All variants (per diode)

2.

For variant 03 the “per device” ratings apply only when both cathode terminals are tied together.

2.3

1.4

°C/W