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L6391 Datasheet(PDF) 17 Page - STMicroelectronics

Part # L6391
Description  High-voltage high and low side driver
PDF  21 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L6391 Datasheet(HTML) 17 Page - STMicroelectronics

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L6391
Bootstrap driver
Doc ID 17892 Rev 1
17/21
The following equation is useful to compute the drop on the bootstrap DMOS:
Equation 3
where Qgate is the gate charge of the external power MOS, Rdson is the on resistance of the
bootstrap DMOS and Tcharge is the charging time of the bootstrap capacitor.
For example: using a power MOS with a total gate charge of 30nC the drop on the bootstrap
DMOS is about 1 V, if the Tcharge is 5 μs. In fact:
Equation 4
Vdrop has to be taken into account when the voltage drop on CBOOT is calculated: if this drop
is too high, or the circuit topology doesn’t allow a sufficient charging time, an external diode
can be used.
Figure 8.
Bootstrap driver with high voltage fast recovery diode
Figure 9.
Bootstrap driver with internal charge pump
V
drop
I
ch
e
arg Rdson
V
drop
Q
gate
T
ch
e
arg
------------------R
dson
==
V
drop
30nC
5
μs
--------------- 120
Ω 0.7V
=
TO LOAD
H.V.
HVG
LVG
CBOOT
DBOOT
BOOT
V
CC
OUT
b
HVG
LVG
TO LOAD
H.V.
CBOOT
V
CC
OUT
BOOT



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