Characteristics

STPS40SM100C

2/9

Doc ID 15525 Rev 2

1

Characteristics

To evaluate the conduction losses use the following equation:

2

(RMS)

Table 2.

Absolute ratings (limiting values)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

100

V

Forward current rms

60

A

Average forward current

δ = 0.5

Per diode

20

A

Per device

40

Surge non repetitive forward current

530

A

(1)

Repetitive peak avalanche power

18000

W

(2)

Maximum repetitive peak avalanche voltage

120

V

(2)

Maximum single pulse peak avalanche voltage

120

V

Storage temperature range

-65 to + 175

°C

150

°C

1.

For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5. More details regarding the avalanche

energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.

2.

Refer to Figure 11.

3.

condition to avoid thermal runaway for a diode on its own heatsink

dPtot

dTj

---------------

1

Rth j

a

–

()

--------------------------

<

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Junction to case

Per diode

Total

1.3

0.7

°C/W

Coupling

0.1

Table 4.

Static electrical characteristics (per diode, at 25 °C unless otherwise specified)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

Reverse leakage current

7µA

7

mA

13

45

µA

13

45

mA

(2)

Forward voltage drop

520

mV

435

620

700

520

580

740

810

605

665

1.

2.