STPS40SM100C datasheet(3/9 Pages) STMICROELECTRONICS

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STPS40SM100C

Characteristics

Doc ID 15525 Rev 2

3/9

Figure 2.

Average forward power dissipation

versus average forward current

(per diode)

Figure 3.

Average forward current versus

ambient temperature (

δ = 0.5, per

diode)

PF(av)(W)

10121416

18202224

δ=0.05

δ=0.1

δ=0.2

δ=0.5

δ=1

δ=tp/T

I (av)(A)

IF(av)(A)

100

125

150

th(j-a)=Rth(j-c)

th(j-a)=15 °C/W

δ=tp/T

(°C)

amb

Figure 4.

Normalized avalanche power

derating versus pulse duration

Figure 5.

Normalized avalanche power

derating versus junction

temperature

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(t )

(1µs)

ARM p

ARM

0.001

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(Tj)

(25°C)

ARM

Figure 6.

Non repetitive surge peak forward

current versus overload duration,

maximum values, per diode

Figure 7.

Relative variation of thermal

impedance junction to case

versus pulse duration

100

150

200

250

300

350

1.E-03

1.E-02

1.E-01

1.E+00

c=25 °C

c=75 °C

c=125 °C

δ =0.5

t(s)

IM(A)

Zth(j-c)/Rth(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

δ=tp/T

tp(s)

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