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STPS3045DJF Datasheet(PDF) 2 Page - STMicroelectronics

Part # STPS3045DJF
Description  Power Schottky rectifier
PDF  7 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS3045DJF Datasheet(HTML) 2 Page - STMicroelectronics

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Characteristics
STPS3045DJF
2/7
Doc ID 16758 Rev 3
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 0.43 x IF(AV) + 0.00433 IF
2
(RMS)
Table 2.
Absolute ratings (limiting values, anode terminals short circuited)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
45
V
IF(RMS) Forward rms current
45
A
IF(AV)
Average forward current
Tc = 95 °C, δ = 0.5
30
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
Tc = 25 °C
200
A
PARM
Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
12500
W
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Maximum operating junction temperature (1)
1.
condition to avoid thermal runaway for a diode on its own heatsink
150
°C
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
2.5
°C/W
Table 4.
Static electrical characteristics (anode terminals short circuited)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IR
(1)
1.
Pulse test: tp = 380 µs, δ < 2%
Reverse leakage current
Tj = 25 °C
VR = VRRM
--
300
µA
Tj = 125 °C
-
20
80
mA
VF
(1)
Forward voltage drop
Tj = 25 °C
IF = 15 A
--
0.56
V
Tj = 125 °C
-
0.41
0.46
Tj = 25 °C
IF = 30 A
--
0.64
Tj = 125 °C
-
0.50
0.56
dPtot
dTj
<
1
Rth(j-a)



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