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RT8223P Datasheet(PDF) 22 Page - Richtek Technology Corporation |
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RT8223P Datasheet(HTML) 22 Page - Richtek Technology Corporation |
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22 / 23 page ![]() RT8223P 22 DS8223P-01 June 2011 www.richtek.com P P LOAD(MAX) OUT 1 V LIR I ESR 8C f − ⎛⎞ =× × + ⎜⎟ ×× ⎝⎠ where VSAG and VSOAR are the allowable amount of undershoot voltage the and overshoot voltage in load transient, Vp-p is the output ripple voltage, tOFF(MIN) is the minimum off-time, and K is a factor listed in Table 1. Thermal Considerations For continuous operation, do not exceed absolute maximum junction temperature. The maximum power dissipation depends on the thermal resistance of the IC package, PCB layout, rate of surrounding airflow, and difference between junction and ambient temperature. The maximum power dissipation can be calculated by the following formula : PD(MAX) = (TJ(MAX) − TA) / θJA where TJ(MAX) is the maximum junction temperature, TA is the ambient temperature, and θJA is the junction to ambient thermal resistance. For recommended operating condition specifications of the RT8223P, the maximum junction temperature is 125 °C and TA is the ambient temperature. The junction to ambient thermal resistance, θJA, is layout dependent. For WQFN- 24L 4x4 packages, the thermal resistance, θJA, is 52°C/ W on a standard JEDEC 51-7 four-layer thermal test board. The maximum power dissipation at TA = 25 °C can be calculated by the following formula : PD(MAX) = (125 °C − 25°C) / (52°C/W) = 1.923W for WQFN-24L 4x4 package The maximum power dissipation depends on the operating ambient temperature for fixed TJ(MAX) and thermal resistance, θJA. For the RT8223P package, the derating curve in Figure 5 allows the designer to see the effect of rising ambient temperature on the maximum power dissipation. Figure 5. Derating Curve for the RT8223P Package Layout Considerations Layout is very important in high frequency switching converter designs, the PCB could radiate excessive noise and contribute to the converter instability with improper layout. Certain points must be considered before starting a layout using the RT8223P. Place the filter capacitor close to the IC, within 12mm (0.5 inch) if possible. Keep current limit setting network as close as possible to the IC. Routing of the network should avoid coupling to high voltage switching nodes. Connections from the drivers to the respective gate of the high side or the low side MOSFET should be as short as possible to reduce stray inductance. Use 0.65mm (25mils) or wider trace. All sensitive analog traces and components such as VOUTx, FBx, GND, ENTRIPx, PGOOD, and TONSEL should be placed away from high voltage switching nodes such as PHASEx, LGATEx, UGATEx, or BOOTx nodes to avoid coupling. Use internal layer(s) as ground plane(s) and shield the feedback trace from power traces and components. Place the ground terminal of VIN capacitor(s), VOUTx capacitor(s), and source of low side MOSFETs as close as possible. The PCB trace defined as PHASEX node, which connects to source of high side MOSFET, drain of low side MOSFET and high voltage side of the inductor, should be as short and wide as possible. 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 0 25 50 75 100 125 Ambient Temperature (°C) Four-Layer PCB |
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