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BD135 Datasheet(PDF) 1 Page - Comset Semiconductor |
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BD135 Datasheet(HTML) 1 Page - Comset Semiconductor |
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1 / 3 page ![]() NPN BD135 – BD137 – BD139 25/09/2012 COMSET SEMICONDUCTORS 1 | 3 27/08/201225/09/2012 SILICON PLANAR EPITAXIAL POWER TRANSISTORS. The BD135-BD137-BD139 are NPN Transistors They are recommended for driver stages in hi-fi amplifiers and television circuits. They are mounted in Jedec TO-126 plastic package. PNP complements are BD136-BD138-BD140. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCBO Collector-Base Voltage (IE= 0) BD135 45 V BD137 60 BD139 100 VCEO Collector-Emitter Voltage (IB= 0) BD135 45 V BD137 60 BD139 80 VCER Collector-Emitter Voltage (RBE= 1 kΩ) BD135 45 V BD137 60 BD139 100 VEBO Emitter-Base Voltage (IC= 0) 5 V IC Collector Current IC 1.5 A ICM 2 IB Base current IB 0.5 A PT Total power Dissipation Tmb = 70°C 8 W TJ Junction Temperature 150 °C TStg Storage Temperature -65 to +150 °C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-c Thermal Resistance, Junction-Case 10 °C/W RthJ-a Thermal Resistance, Junction-ambient in free air 100 °C/W |
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