BD245 datasheet(1/3 Pages) COMSET

Part #	BD245

Description	NPN SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS

PDF	3 Pages

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Manufacturer	COMSET [Comset Semiconductor]

Direct Link	http://comset.halfin.com

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1 / 3 page

BD245 – A – B – C

22/10/2012

COMSET SEMICONDUCTORS

1/3

N

NP

PN

N S

SIIN

NG

GL

LE

E--D

DIIF

FF

FU

US

SE

ED

D M

ME

ES

SA

A S

SIIL

LIIC

CO

ON

N P

PO

OW

WE

ER

R

T

TR

RA

AN

NS

SIIS

ST

TO

OR

RS

S

They are the power transistors for power amplifier and high-speed-switching applications.

The complementary is BD246, A, B, C

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

VCEO

Collector-Emitter Voltage (IC = -30mA)

BD245

45

V

BD245A

60

BD245B

80

BD245C

100

VCER

Collector-Emitter Voltage (RBE = 100 Ω)

BD245

55

V

BD245A

70

BD245B

90

BD245C

115

VEBO

Emitter-Base Voltage

5.0

V

IC

Collector Current

IC

10

A

ICM

15

IB

Base Current

3

A

PT

Power Dissipation

Tmb = 25° C

80

Watts

TJ

Junction Temperature

-65 to +150

°C

TS

Storage Temperature

-65 to +150

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

RthJC

Junction to Case Thermal Resistance

1.56

°C / W

RthJA

Junction to free air Thermal Resistance

42

°C / W

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