BD245 datasheet(2/3 Pages) COMSET

2 / 3 page

BD245 – A – B – C

22/10/2012

COMSET SEMICONDUCTORS

2/3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

ICES

Collector- Emitter

Cut-off Current

VCE = 55 V , VBE = 0

BD245

0.4

VCE = 70 V , VBE = 0

BD245A

VCE = 90 V , VBE = 0

BD245B

VCE = 115 V , VBE = 0

BD245C

ICEO

Collector Cut-off

Current

VCE = 30 V , IB = 0

BD245

0.7

BD245A

VCE = 60 V , IB = 0

BD245B

BD245C

IEBO

Emitter Cut-off Current VE B = 5 V , IC = 0

VCEO

Collector- Emitter

Breakdown Voltage (*)

IC = 30 mA, IB = 0

BD245

BD245A

BD245B

BD245C

100

hFE

DC Current Gain (*)

VCE = 4 V, IC = 1 A

VCE = 4 V, I C= 3 A

VCE = 4 V, IC = 10 A

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

IC = 3 A, IB = 300 mA

IC = 10 A, IB = 2.5 A

VBE

Base-Emitter

Voltage(*)

VCE = 4 V, IC = 3 A

1.6

VCE = 4 V, IC = 10 A

hfe

Small Signal forward

Current Transfer ratio

VCE = 10 V, IC = 500 mA

f = 1MHz

|hfe|

Small Signal forward

Current Transfer ratio

VCE = 10 V, IC = 500 m

Af = 1MHz

(*) Pulse Width

≈ 300 µs, Duty Cycle ∠ 2.0%

RESISTIVE-LOAD-SWITCHING CHARACTERISTICS AT 25°C CASE TEMPERATURE

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

ton

Turn-on Time

IC = 1 A , IB(on) = 100 mA ,

IB(off) = -100 mA

VBE(off) = -3.7 V , RL = 20 Ω

tp = 20 µs

< 2%

0.3

µs

toff

Turn-off Time

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