BD896 datasheet(1/4 Pages) COMSET

Part #	BD896

Description	SILICON DARLINGTON POWER TRANSISTORS

PDF	4 Pages

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Manufacturer	COMSET [Comset Semiconductor]

Direct Link	http://comset.halfin.com

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BD896 – BD898 – BD900 – BD902

25/09/2012

COMSET SEMICONDUCTORS

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SEMICONDUCTORS

SILICON DARLINGTON POWER TRANSISTORS

PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220

enveloppe. They are intended for use in output stages in audio equipment, general amplifiers,

and analogue switching application.

NPN complements are BD895 - BD897 - BD899 - BD901

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

VCBO

Collector-Base Voltage

BD896

-45

V

BD898

-60

BD900

-80

BD902

-100

VCEO

Collector-Emitter Voltage

BD896

-45

V

BD898

-60

BD900

-80

BD902

-100

VEBO

Emitter-Base Voltage

BD896

-5

V

BD898

BD900

BD902

IC

Collector Current

BD896

-8

A

BD898

BD900

BD902

IB

Base Current

BD896

-300

mA

BD898

BD900

BD902

PT

Power Dissipation

Tc = 25°

70

Watts

Ta = 25°

2

TJ

Junction Temperature

150

°C

Ts

Storage Temperature range

-65 to +150

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