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BD896 Datasheet(PDF) 2 Page - Comset Semiconductor |
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BD896 Datasheet(HTML) 2 Page - Comset Semiconductor |
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2 / 4 page ![]() BD896 – BD898 – BD900 – BD902 25/09/2012 COMSET SEMICONDUCTORS 2 | 4 SEMICONDUCTORS ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit ICBO Collector Cutoff Current IE= 0 VCB = -45 V TC=25°C BD896 - - -0.2 mA IE= 0 VCB = -60 V BD898 IE= 0 VCB = -80 V BD900 IE= 0 VCB = -100 V BD902 IE= 0 VCB = -45 V TC=100° C BD896 - - -2 mA IE= 0 VCB = -60 V BD898 IE= 0 VCB = -80 V BD900 IE= 0 VCB = -100 V BD902 ICEO Collector Cutoff Current IE= 0, VCE = - 30 V BD896 - - -0.5 mA IE= 0, VCE = - 30 V BD898 IE= 0, VCE = - 40 V BD900 IE= 0, VCE = - 50 V BD902 IEBO Emitter Cutoff Current VEB= -5 V, IC= 0 BD896 - - -2 mA BD898 BD900 BD902 VCEO Collector-Emitter Breakdown Voltage (*) IC= -100 mA, IB= 0 BD896 -45 - - V BD898 -60 - - BD900 -80 - - BD902 -100 - - VCE(SAT) Collector-Emitter saturation Voltage (*) IC= -3 A, IB= -12 mA BD896 - - -2.5 V BD898 BD900 BD902 |
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