BT138 datasheet(2/3 Pages) COMSET

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BT138 Series

26/09/2012

COMSET SEMICONDUCTORS

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SEMICONDUCTORS

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ Max Unit

VDRM

Repetitive peak off-state

voltage

ID = 0.1 mA

BT137-500

500

BT137-600

600

BT137-800

800

VRRM

Repetitive peak reverse

voltage

ID = 0.5 mA

BT137-500

500

BT137-600

600

BT137-800

800

IGT

Gate trigger current

VD = 12 V

RL = 100 Ω

T2+ G+

T2+ G-

T2- G-

T2- G+

100

VGT

Gate trigger voltage

VD = 12 V

RL = 100 Ω

T2+ G+

1.5

T2+ G-

1.5

T2- G-

1.5

T2- G+

1.8

Latching current

VD = 12 V

IGT = 100 mA

T2+ G+

T2+ G-

T2- G-

T2- G+

Holding current

IT = 200 mA, IGT = 50 mA

Off-state leakage current

VD = VDRM max

Tj = 125°C

0.5

On-state voltage

IT = 15 A

1.7

dVD/dt

Critical rate of rise of

off-state voltage

VDM = 67% VDRMmax

Tj = 125°C

Exponential waveform;

gate open circuit

100

250

V/µs

dVCOM/dt

Critical rate of rise of change

commutatating current

VD = 400 V; Tj = 95 °C

dIcom/dt = 5.4 A/ms; IT = 12

gate open circuit

V/µs

tgt

Gate controlled turn-on time

ITM = 16 A; VD = VDRMmax

IG = 0.1 A; dIG/dt = 5 A/µs

µs

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