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BT151 Datasheet(PDF) 1 Page - Comset Semiconductor |
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BT151 Datasheet(HTML) 1 Page - Comset Semiconductor |
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1 / 3 page ![]() BT151 Series 26/09/2012 COMSET SEMICONDUCTORS 1 | 3 SEMICONDUCTORS THYRISTORS ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BT151-500R BT151-650R BT151-800R VDRM Repetitive peak off-state voltage 500 650 800 V VRRM Repetitive peak reverse voltage 500 650 800 IT(RMS) RMS on-state current 12 A IT(AV) Average on-state current 7.5 A ITSM Non-repetitive peak on- state current 100 A PGM Peak gate power 5 W PG(AV) Average gate power 0.5 W Tstg Storage temperature range -45 to +150 °C Tj Operating junction temperature 110 °C THERMAL CHARACTERISTICS Symbol Ratings Value Unit R∂j-mb Thermal resistance junction to mounting base ≤ 1.3 °C/W R∂JA Thermal resistance junction to ambient ≤ 60 FEATURE Glass passivated thyristors in a plastic TO220 package. They are intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. Compliance to RoHS. |
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Similar Description - BT151 |
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