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BT151 Datasheet(PDF) 2 Page - Comset Semiconductor

Part # BT151
Description  THYRISTORS
PDF  3 Pages
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Manufacturer  COMSET [Comset Semiconductor]
Direct Link  http://comset.halfin.com
Logo COMSET - Comset Semiconductor

BT151 Datasheet(HTML) 2 Page - Comset Semiconductor

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BT151 Series
26/09/2012
COMSET SEMICONDUCTORS
2 | 3
SEMICONDUCTORS
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ Max Unit
VDRM
Repetitive peak
off-state voltage
BT151-500R
500
-
-
V
BT151-650R
650
-
-
BT151-800R
800
-
-
VRRM
Repetitive peak reverse
voltage
BT151-500R
500
-
-
BT151-650R
650
-
-
BT151-800R
800
-
-
IGT
Gate trigger current
VD = 12 V; IT = 100 mA
-
-
15
mA
VGT
Gate trigger voltage
VD = 12 V; IT = 100 mA
-
-
1.5
V
IL
Latching current
VD = 12 V; IGT = 100 mA
-
-
40
mA
IH
Holding current
VD = 12 V; IGT = 100 mA
-
-
20
mA
ID
Off-state current
VD = VDRM max; Tj = 125°C
-
-
0.5
mA
IR
Reverse current
VR = VRRM max; Tj = 125°C
-
-
0.5
mA
VT
On-state voltage
IT = 23 A
-
-
1.75
V
DYNAMIC CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ Max Unit
dVD/dt
Critical rate of rise of
off-state voltage
VDM = 67% VDRMmax; Tj = 125°C
Exponential waveform; gate
open circuit
50
130
-
V/µs
VDM = 67% VDRMmax; Tj = 125°C
Exponential waveform
RGK = 100 Ω
200
1000
-
V/µs
tgt
Gate controlled
turn-on time
ITM = 40 A; VD = VDRMmax
IG = 0.1 A; dIG/dt = 5 A/µs
-
2
-
µs
tq
Circuit commutated
Turn-off time
VDM = 67% VDRMmax; Tj = 125°C
ITM = 20 A; VR = 25 V
RGK = 100 Ω
dITM/dt = 30 A/µs
dVD/dt = 50 V/µS
-
70
-
µs



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