BUV26 datasheet(1/3 Pages) COMSET

Part #	BUV26

Description	SILICON POWER TRANSISTORS

PDF	3 Pages

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Manufacturer	COMSET [Comset Semiconductor]

Direct Link	http://comset.halfin.com

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BUV26 – BUV26A

29/09/2012

COMSET SEMICONDUCTORS

1 | 3

SEMICONDUCTORS

High-speed,NPN power transistors in a TO-220 envelope. They are intended for fast

switching applications such as high frequency and efficiency converters, switching regulators

and motor control.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

BUV26

BUV26A

VCBO

Collector-Base Voltage

IE = 0

180

200

V

VCEO

Collector-Emitter Voltage

IB = 0

90

100

V

VEBO

Emitter-Base Voltage

IC = 0

7

5

V

IC

Collector Current

14

A

ICM

Collector Peak Current

tp = 10ms

25

A

IB

Base Current

4

A

IBM

Base Current

tp = 10ms

6

A

Pt

Power Dissipation

85

65

W

Tj

Junction Temperature

150

°C

Tstg

Storage Temperature range

-65 to 150

Limiting values in accordance with the Absolute Maximum System (IEC 134)

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

RthJ-mb

From junction to mounting base

BUV26

1.76

°C/W

BUV26A

SILICON POWER TRANSISTORS

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