BUV26 datasheet(2/3 Pages) COMSET

2 / 3 page

BUV26 – BUV26A

29/09/2012

COMSET SEMICONDUCTORS

2 | 3

SEMICONDUCTORS

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Value

Unit

Min

Typ

Max

ICEX

Collector Cutoff

Current (*)

VCE =VCESMax

VBE= 1.5V, TJ= 125°C

BUV26

BUV26A

IEBO

Emitter Cutoff

Current

VEB= 5 V, IC= 0

BUV26

BUV26A

VCE0sust

Collector-Emitter

Sustaining Voltage

IB= 0 , IC= 0.2 A

L = 25 mH

BUV26

BUV26A

100

VCE(SAT)

Collector-Emitter

saturation Voltage

IC= 6 A, IB= 600 mA

BUV26

0.6

IC= 5 A, IB= 500 mA

BUV26A

0.5

IC=12 A, IB= 1.2 A

BUV26

1.5

IC=10 A, IB= 1 A

BUV26A

VBE(SAT)

Base-Emitter

Saturation Voltage

IC= 6 A, IB= 600 mA

BUV26

1.2

IC= 5 A, IB= 500 mA

BUV26A

1.2

IC=12 A, IB= 1.2 A

BUV26

IC=10 A, IB= 1 A

BUV26A

1.5

SWITCHING TIMES

Symbol

Ratings

Test Condition(s)

Value

Unit

Min

Typ

Max

ton

turn-on time

For BUV26

IC= 12 A , VCC= 50 V

IB1 = 1.2 A , IB2 = 2 A

For BUV26A

IC= 10 A , VCC= 50 V

IB1 = 1 A , IB2 = 2 A

BUV26

0.4

0.8

µs

BUV26A

toff

turn-off time

BUV26

0.5

1.2

BUV26A

Fall time

BUV26

0.12

0.4

BUV26A

(*) Mesured with a half-sinewave voltage (curve tracer).

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