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BUW48 Datasheet(PDF) 2 Page - Comset Semiconductor |
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BUW48 Datasheet(HTML) 2 Page - Comset Semiconductor |
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2 / 3 page ![]() NPN BUW48 01/10/2012 COMSET SEMICONDUCTORS 2/3 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit VCEO(SUS) Collector-Emitter Sustaining Voltage (*) IC= 200 mA, IB= 0 A L= 25 mH 60 - - V VEBO Emitter-Base Voltage IC= 0 A , IE= 50 mA 7 - - V ICEX Collector Cutoff Current VCE= 60 V, VBE= -1.5 V - - 1 mA VCE= 60 V, VBE= -1.5 V Tcase = 125°C - - 3 IEBO Emitter Cutoff Current VEB= 5 V, IC= 0 A - - 1 mA VCE(SAT) Collector-Emitter saturation Voltage (*) IC= 20 A, IB= 2 A - - 0.6 V IC= 40 A, IB= 4 A - - 1.4 VBE(SAT) Base-Emitter saturation Voltage (*) IC= 40 A, IB= 4 A - - 2.1 fT Transition frenquency VCE= 60 V, IC= 1 A f= 15MHz - 8 - MHz SWITCHING TIMES Symbol Ratings Test Condition(s) Min Typ Mx Unit ton Turn-on time IC= 40 A, IB1 = -IB2 = 4 A VCC=60 V - 1.2 1.5 µs ts Storage time - 0.6 1.1 tf File time - 0.17 0.25 (*) Pulse Duration = 300 µs, Duty Cycle <= 1.5% |
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