BUZ31 datasheet(2/3 Pages) COMSET

2 / 3 page

BUZ31

01/10/2012

COMSET SEMICONDUCTORS

2/3

SEMICONDUCTORS

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VDSS

Drain-Source Breakdown

Voltage

ID= 250 µA, VGS= 0 V

200

VGS(th)

Gate-threshold Voltage

ID=1 mA, VGS= VDS

2.1

IDSS

Zero Gate Voltage Drain

Current

VDS= 200 V, VGS= 0 V

Tj= 25 °C

0.1

µA

VDS= 200 V, VGS= 0 V

Tj= 125 °C

100

IGSS

Gate-Source leakage Current

VGS= 20 V, VDS= 0 V

100

RDS(on)

Drain-Source on Resistance

ID= 9 A, VGS= 10 V

0.16

0.2

Ω

DYNAMIC CHARACTERISTICS

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

gfs

Transconductance

VDS >2 * ID * RDS(on)max

ID= 9 A

4.2

CISS

Input Capacitance

VGS= 0 V, VDS= 25 V

f= 1MHz

840

1120

COSS

Output Capacitance

180

270

CRSS

Reverse transfer Capacitance

150

td(on)

Turn-on Delay Time

VDD= 30 V, VGS= 10 V

ID= 3 A, RGS= 50 Ω

Rise time

td(off)

Turn-off Delay Time

150

200

Fall Time

REVERSE DIODE

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

Inverse Diode Continuous

Forward Current.

TC = 25°C

14.5

ISM

Inverse diode direct current,

pulsed.

TC = 25°C

VSD

Inverse Diode Forward voltage

VGS = 0 V, IF = 29 A

1.1

1.6

Trr

Reverse Recovery Time

VR = 100 V, IF = IS

diF/dt = 100 A/µs

170

Qrr

Reverse Recovery Charge

1.1

µC

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