2SA1417 / 2SC3647

No.2006-1/7

Features

•

Adoption of FBET, MBIT processes

•

High breakdown voltage and large current capacity

•

Fast switching speed

•

Ultrasmall size making it easy to provide high-density small-sized hybrid ICs

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

(--)120

V

Collector-to-Emitter Voltage

VCEO

(--)100

V

Emitter-to-Base Voltage

VEBO

(--)6

V

Collector Current

IC

(--)2

A

Collector Current (Pulse)

ICP

(--)3

A

Collector Dissipation

PC

500

mW

1.5

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Package Dimensions

unit : mm (typ)

7007B-004

Ordering number : EN2006D

90512 TKIM/22006EA MSIM/O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS

SANYO Semiconductors

DATA SHEET

http://www.sanyosemi.com/en/network/

Product & Package Information

• Package

: PCP

• JEITA, JEDEC

: SC-62, SOT-89, TO-243

• Minimum Packing Quantity : 1,000 pcs./reel

Packing Type: TD

Marking

Electrical Connection

TD

1 : Base

2 : Collector

3 : Emitter

SANYO : PCP

1.5

0.5

0.4

3.0

4.5

1.6

0.4

12

3

1.5

0.75

Top View

Bottom View

2SA1417S-TD-E

2SA1417T-TD-E

2SC3647S-TD-E

2SC3647T-TD-E

2SC3647

2SA1417

RANK

RANK

2

3

1

2SC3647

2

3

1

2SA1417

2SA1417/2SC3647

PNP / NPN Epitaxial Planar Silicon Transistor

High-Voltage Switching

Applications