MJ15018 MJ15020 MJ15019 MJ15021

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(IC = 100 mAdc, IB = 0)

MJ15018, MJ15019

MJ15020, MJ15021

VCEO(sus)

200

250

—

—

Vdc

Collector Cutoff Current

(VCE = 150 Vdc, IB = 0)

MJ15018, MJ15019

(VCE = 200 Vdc, IB = 0)

MJ15020, MJ15021

ICEO

—

—

500

500

µAdc

Emitter Cutoff Current

(VEB = 7.0 Vdc, IC = 0)

IEBO

—

500

µAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward–Biased

(VCE = 50 Vdc, t = 0.5 s (non–repetitive)

IS/b

3.0

—

Adc

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 1.0 Adc, VCE = 4.0 V)

(IC = 3.0 Adc, VCE = 4.0 V)

hFE

30

10

—

—

Collector–Emitter Saturation Voltage

(IC = 1.0 Adc, IB = 0.1 Adc)

VCE(sat)

—

1.0

Vdc

Base–Emitter on Voltage

(IC = 1.0 Adc, VCE = 4.0 Vdc)

VBE(on)

—

2.0

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 0.5 Adc, VCE = 10 Vdc, ftest = 1.0 MHz)

fT

20

—

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, Ftest = 1.0 MHz)

Cob

—

500

pF

(1) Pulse Test: Pulse Width

v 300 µs, Duty Cycle v 2%

Figure 2. DC Current Gain

Figure 3. Maximum Rated Forward Biased

Safe Operating Area

5.0

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

7.0 10

500

10

2.0

5.0

100

200

20

30

1.0

0.5

0.02

0.2

WIRE BOND LIMIT

THERMAL LIMIT

SECOND BREAKDOWN

LIMIT

300

1.0

3.0

5.0

10

0.1

0.2

0.5

IC, COLLECTOR CURRENT (AMPS)

TJ = 25°C

VCE = 4.0 Vdc

50

100

20

2.0

200

MJ15018/19

TC = 25°C

PNP

50

70

2.0

7.0

0.3

0.7

70

30

10

5.0

7.0

3.0

3.0

0.7

0.3

0.1

0.03

0.01

0.07

0.05

NPN

MJ15020/21

7.0

TYPICAL DYNAMIC CHARACTERISTICS