1

Motorola Bipolar Power Transistor Device Data

Medium-Power Complementary

Silicon Transistors

. . . for use as output devices in complementary general purpose amplifier applica-

tions.

• High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc

• Monolithic Construction with Built–in Base–Emitter Shunt Resistors

MAXIMUM RATINGS

Rating

Symbol

MJ2500

MJ3000

MJ2501

MJ3001

Unit

Collector–Emitter Voltage

VCEO

60

80

Vdc

Collector–Base Voltage

VCB

60

80

Vdc

Emitter–Base Voltage

VEB

5.0

Vdc

Collector Current

IC

10

Adc

Base Current

IB

0.2

Adc

Total Device Dissipation

@ TC = 25_C

Derate above 25

_C

PD

150

0.857

Watts

W/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to + 200

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

θJC

1.17

_C/W

Figure 1. Darlington Circuit Schematic

NPN

MJ3000

MJ3001

BASE

COLLECTOR

EMITTER

[ 2.0 k

[ 50

PNP

MJ2500

MJ2501

BASE

COLLECTOR

EMITTER

[ 2.0 k

[ 50

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJ2500/D

MJ2955 (See 2N3055)

MJ2955A

(See 2N3055A)

*

*Motorola Preferred Device

PNP

CASE 1–07

TO–204AA

(TO–3)

10 AMPERE

DARLINGTON

POWER TRANSISTORS

COMPLEMENTARY

SILICON

60 – 80 VOLTS

150 WATTS

MJ2500

MJ2501

MJ3000

MJ3001

NPN

*

REV 7