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D518 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

Part # D518
Description  30V N-Channel AlphaMOS
PDF  6 Pages
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

D518 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors

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AOD518/AOI518
30V N-Channel AlphaMOS
General Description
Product Summary
VDS
ID (at VGS=10V)
54A
RDS(ON) (at VGS=10V)
< 8m
Ω
RDS(ON) (at VGS = 4.5V)
< 12m
Ω
Application
100% UIS Tested
100% Rg Tested
Symbol
VDS
VGS
V
±20
Gate-Source Voltage
Drain-Source Voltage
30
V
Maximum
Units
Parameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
30V
• Latest Trench Power MOSFET technology
• Very Low RDS(on) at 10VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
• DC/DC Converters in Computing
• Isolated DC/DC Converters in Telecom and Industrial
G
D
S
G
G
D
D
S
S
D
Top View
Bottom View
TO-251A
IPAK
TO252
DPAK
TopView
Bottom View
G
G
D
D
S
S
D
VGS
IDM
IAS
EAS
VDS Spike
VSPIKE
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJC
100ns
36
V
Maximum Junction-to-Ambient
A
°C/W
RθJA
16
41
20
Units
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Typ
V
±20
Gate-Source Voltage
Max
TA=70°C
ID
54
42
TC=25°C
TC=100°C
96
Pulsed Drain Current
C
Continuous Drain
Current
G
mJ
Avalanche Current
C
12
Continuous Drain
Current
31
15
A
25
Avalanche energy L=0.1mH
C
A
TA=25°C
IDSM
A
W
Power Dissipation
A
PDSM
W
TA=70°C
50
1.6
TA=25°C
TC=25°C
2.5
25
TC=100°C
Power Dissipation
B
PD
Maximum Junction-to-Case
°C/W
°C/W
Maximum Junction-to-Ambient
A D
2.5
50
3
Rev 1: Mar 2012
www.aosmd.com
Page 1 of 6


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