AON3613 datasheet(2/9 Pages) AOSMD

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AON3613

Symbol

Min

Typ

Max

Units

BVDSS

VDS=30V, VGS=0V

TJ=55°C

IGSS

±10

µA

VGS(th)

Gate Threshold Voltage

0.7

1.05

1.5

ID(ON)

TJ=125°C

Ω

gFS

VSD

0.75

2.5

Ciss

245

Coss

Crss

5.3

Ω

Qg(10V)

5.7

Qg(4.5V)

2.6

Qgs

0.5

Qgd

tD(on)

3.5

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Turn-On Rise Time

=10V, V =15V, R =3.3

Ω,

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Total Gate Charge

VGS=10V, VDS=15V, ID=4.5A

Gate Source Charge

Gate Drain Charge

Total Gate Charge

Static Drain-Source On-Resistance

Ω

IS=1A,VGS=0V

VDS=5V, ID=4.5A

VGS=4.5V, ID=3A

N-channel Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IDSS

µA

Zero Gate Voltage Drain Current

Drain-Source Breakdown Voltage

On state drain current

ID=250µA, VGS=0V

VGS=10V, VDS=5V

VGS=10V, ID=4.5A

Reverse Transfer Capacitance

VGS=0V, VDS=15V, f=1MHz

SWITCHING PARAMETERS

VDS=VGS, ID=250µA

VDS=0V, VGS=±10V

Gate-Body leakage current

Forward Transconductance

Diode Forward Voltage

RDS(ON)

3.5

tD(off)

3.5

trr

6.5

Qrr

7.5

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=500A/µs

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=15V, RL=3.3Ω,

RGEN=3Ω

Turn-Off Fall Time

Body Diode Reverse Recovery Time

IF=4.5A, dI/dt=500A/µs

A. The value of R

qJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation P

D is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initialT

J=25°C.

D. The R

qJA is the sum of the thermal impedance from junction to lead RqJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with

2oz. Copper, assuming a maximum junction temperature of T

J(MAX)=150°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

Rev 1: Sep. 2012

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