AON3613 datasheet(6/9 Pages) AOSMD

6 / 9 page

AON3613

Symbol

Min

Typ

Max

Units

BVDSS

-30

VDS=-30V, VGS=0V

-1

TJ=55°C

-5

IGSS

±100

VGS(th)

Gate Threshold Voltage

-1.3

-1.8

-2.3

ID(ON)

-20

TJ=125°C

100

Ω

gFS

VSD

-0.78

-1

-2.5

Ciss

290

Coss

Crss

Ω

Qg(10V)

5.8

Qg(4.5V)

2.8

Qgs

1.1

Qgd

1.3

tD(on)

Ω

On state drain current

P-channel Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

Drain-Source Breakdown Voltage

ID=-250µA, VGS=0V

VGS=-10V, VDS=-5V

VGS=-10V, ID=-4.5A

RDS(ON)

IDSS

µA

VDS=VGS, ID=-250µA

VDS=0V, VGS=±20V

Zero Gate Voltage Drain Current

Gate-Body leakage current

VGS=-4.5V, ID=-3A

Forward Transconductance

Diode Forward Voltage

=-10V, V =-15V, R =3.3

Ω,

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Total Gate Charge

Turn-On Rise Time

VGS=-10V, VDS=-15V, ID=-4.5A

Gate Source Charge

Gate Drain Charge

Total Gate Charge

Reverse Transfer Capacitance

VGS=0V, VDS=-15V, f=1MHz

Static Drain-Source On-Resistance

IS=-1A,VGS=0V

VDS=-5V, ID=-4.5A

SWITCHING PARAMETERS

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

tD(off)

trr

Qrr

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

VGS=-10V, VDS=-15V, RL=3.3Ω,

RGEN=3Ω

Turn-Off Fall Time

Turn-On Rise Time

Body Diode Reverse Recovery Charge IF=-4.5A, dI/dt=500A/µs

Turn-Off DelayTime

IF=-4.5A, dI/dt=500A/µs

Body Diode Reverse Recovery Time

A. The value of R

qJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation P

D is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initialT

J=25°C.

D. The R

qJA is the sum of the thermal impedance from junction to lead RqJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with

2oz. Copper, assuming a maximum junction temperature of T

J(MAX)=150°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

Rev 1: Sep. 2012

www.aosmd.com

Page 6 of 9

AON3613 Datasheet(PDF) 6 Page - Alpha & Omega Semiconductors

AON3613 Datasheet(HTML) 6 Page - Alpha & Omega Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL