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P605 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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P605 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 9 page  Symbol Max p-channel Units VDS V VGS V IDM TJ, TSTG °C Symbol Typ Max 40 50 67 80 RθJL 33 40 Symbol Typ Max 38 50 66 80 RθJL 30 40 Maximum Junction-to-Lead C Steady-State °C/W Parameter Units Maximum Junction-to-Ambient A t ≤ 10s RθJA Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State °C/W Maximum Junction-to-Lead C Steady-State °C/W Thermal Characteristics: p-channel °C/W °C/W Units °C/W Junction and Storage Temperature Range -55 to 150 -55 to 150 Thermal Characteristics: n-channel Parameter Maximum Junction-to-Ambient A t ≤ 10s RθJA TA=70°C Power Dissipation TA=25°C PD 30 -30 ±20 Drain-Source Voltage Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel W 7.5 6 30 2.5 1.6 -5.3 -6.6 2.5 1.6 -30 ±20 Gate-Source Voltage A Continuous Drain Current A TA=25°C ID TA=70°C Pulsed Drain Current B AOP605 Complementary Enhancement Mode Field Effect Transistor Features n-channel p-channel VDS (V) = 30V -30V ID = 7.5A (VGS = 10V) -6.6A (VGS = -10V) RDS(ON) < 28m Ω (V GS = 10V) < 35m Ω (V GS = -10V) < 43m Ω (V GS = 4.5V) < 58m Ω (V GS = -4.5V) General Description The AOP605/L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. AOP605 and AOP605L are electrically identical. -RoHS Compliant -AOP605L is Halogen Free G1 S1 G2 S2 D1 D1 D2 D2 1 2 3 4 8 7 6 5 PDIP-8 G2 D2 S2 G1 D1 S1 n-channel p-channel PDIP8 Top View Bottom View Alpha & Omega Semiconductor, Ltd. |
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