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ADP3153 Datasheet(PDF) 9 Page - Analog Devices

Part # ADP3153
Description  5-Bit Programmable Dual Power Supply Controller for Pentium II Processor
PDF  12 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

ADP3153 Datasheet(HTML) 9 Page - Analog Devices

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ADP3153
–9–
REV. 0
The maximum rms current of the low side FET is:
IRMSLS = [DMAXLF (ILVALLEY
2 + I
LPEAK
2 + I
LVALLEYILPEAK)/3]
0.5
= 8.41 Arms
The RDS(ON) for each FET can be derived from the allowable
dissipation. If we allow 5% of the maximum output power for
FET dissipation, the total dissipation will be:
PFETALL = 0.05 VOIOMAX = 2 W
Allocating two-thirds of the total dissipation for the high side
FET and one-third for the low side FET, the required minimum
FET resistances will be:
RDS(ON)HSF(MIN) = 1.33/11.5
2 = 10 m
Ω
RDS(ON)LSF(MIN) = 0.67/8.41
2 = 9.5 m
Ω
Note that there is a tradeoff between converter efficiency and
cost. Larger FETs reduce the conduction losses and allow higher
efficiency but lead to increased cost. If efficiency is not a major
concern the Fairchild MOSFET NDP6030L or International
Rectifier IRL3103 is an economical choice for both the high side
and low side positions. Those devices have an RDS(ON) of 14 m
Ω
at VGS = 10 V and at 25
°C. The low side FET is turned on with
at least 10 V. The high side FET, however, is turned on with
only 12 V – 5 V = 7 V. If we check the typical output character-
istics of the device in the data sheet, we find that for an output
current of 10 A, and at a VGS of 7 V, the VDS is 0.15 V, which
gives a RDS(ON) = VDS/ID = 15 m
Ω. This value is only slightly
above the one specified at a VGS of 10 V, so the resistance in-
crease due to the reduced gate drive can be neglected. We have
to modify, however, the specified RDS(ON) at the expected high-
est FET junction temperature of 140
°C by a R
DS(ON) multiplier,
using the graph in the data sheet. In our case:
RDS(ON)MULT = 1.7
Using this multiplier, the expected RDS(ON) at 140
°C is 1.7 × 14
= 24 m
Ω.
The high side FET dissipation is:
PDFETHS = IRMSHS
2R
DS(ON) + 0.5 VINILPEAKQGfMAX/IG = 3.72 W
where the second term represents the turn-off loss of the FET.
(In the second term, QG is the gate charge to be removed from
the gate for turn-off and IG is the gate current. From the data
sheet, QG is about 50 nC – 70 nC and the gate drive current
provided by the ADP3153 is about 1 A.)
The low side FET dissipation is:
PDFETLS = IRMSLS
2R
DS(ON) = 1.7 W
(Note that there are no switching losses in the low side FET.)
To remove the dissipation of the chosen FETs, proper heatsinks
should be used. The Thermalloy 6030 heatsink has a thermal
impedance of 13
°C/W with convection cooling. With this heat-
sink, the junction-to-ambient thermal impedance of the chosen
high side FET
θ
JAHS will be 13 (heatsink-to-ambient) + 2 (junction-
to-case) + 0.5 (case-to-heatsink) = 15.5
°C/W.
At full load and at 50
°C ambient temperature, the junction
temperature of the high side FET is:
TJHSMAX = TA + θJAHS PDFETHS = 105°C
A smaller heatsink may be used for the low side FET, e.g., the
Thermalloy type 7141 (
θ = 20.3°C/W). With this heatsink, the
TJLSMAX = TA + θJALS PDFETLS = 106°C
All of the above calculated junction temperatures are safely
below the 175
°C maximum specified junction temperature of
the selected FET.
The maximum operating junction temperature of the ADP3153
is calculated as follows:
TJICMAX = TA + θJA (IICVCC + PDR)
where
θ
JA is the junction to ambient thermal impedance of the
ADP3153 and PDR is the drive power. From the data sheet,
θ
JA
is equal to 110
°C/W and I
IC = 2.7 mA. PDR can be calculated as
follows:
PDR = (CRSS + CISS)VCC
2 f
MAX = 307 mW
The result is:
TJICMAX = 86°C
CIN Selection and Input Current di/dt Reduction
In continuous-inductor-current mode, the source current of the
high side MOSFET is a square wave with a duty ratio of VO/
VIN. To keep the input ripple voltage at a low value, one or
more capacitors with low equivalent series resistance (ESR) and
adequate ripple-current rating must be connected across the
input terminals. The maximum rms current of the input bypass
capacitors is:
ICINRMS
≈ [V
O(VIN – VO)]
0.5 I
OMAX /VIN = 7 Arms
Let us select the FA-type capacitor with 2700
µF capacitance
and 10 V voltage rating. The ESR of that capacitor is 34 m
Ω
and the allowed ripple current at 100 kHz is 1.94 A. At 105
°C
we would need to connect at least four such capacitors in paral-
lel to handle the calculated ripple current. At 50
°C ambient,
however, the ripple current can be increased, so three capacitors
in parallel are adequate.
The ripple voltage across the three paralleled capacitors is:
VCINRPL = IOMAX [ESRIN/3 + DMAXHF /(3CIN fMIN )]
140 mV p-p
To further reduce the effect of the ripple voltage on the system
supply voltage bus and to reduce the input-current di/dt to
below the recommended maximum of 0.1 A/
µs, an additional
small inductor (L > 1.7
µH @ 10 A) should be inserted between
the converter and the supply bus (see Figure 2).
Feedback Loop Compensation Design
To keep the peak-to-peak output voltage deviation as small as
possible, the low frequency output impedance (i.e., the output
resistance) of the converter should be made equal to the ESR of
the output capacitor. That can be achieved by having a single-pole
roll-off of the voltage gain of the gm error amplifier, where the pole
frequency coincides with the ESR zero of the output capacitor. A
gain with single-pole roll-off requires that the gm amplifier is termi-
nated by the parallel combination of a resistor and capacitor. The
required resistor value can be calculated from the equation:
36
× R
SENSE
g
m
145 k
Ω R
COMP
()
= R
E
where gm = 2.2 ms and the quantities 36 and 145 k
Ω are charac-
teristic of the ADP3153. The calculated compensating resis-
tance is:
R1 R2 = RCOMP = 31 k
Ω



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