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ADP3154 Datasheet(PDF) 9 Page - Analog Devices |
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ADP3154 Datasheet(HTML) 9 Page - Analog Devices |
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9 / 12 page ![]() REV. A ADP3154 –9– The maximum operating junction temperature of the ADP3154 is calculated as follows: TJICMAX = TA + θJA (IICVCC + PDR) where θ JA is the junction-to-ambient thermal impedance of the ADP3154 and PDR is the drive power. From the data sheet, θ JA is equal to 110 °C/W and I IC = 2.7 mA. PDR can be calculated as follows: PDR = (CRSS + CISS)VCC 2 f MAX = 307 mW The result is: TJICMAX = +86°C CIN Selection and Input Current di/dt Reduction In continuous inductor-current mode, the source current of the high side MOSFET is a square wave with a duty ratio of VOUT/ VlN. To keep the input ripple voltage at a low value, one or more capacitors with low equivalent series resistance (ESR) and ad- equate ripple-current rating must be connected across the input terminals. The maximum rms current of the input bypass ca- pacitors is: ICINRMS = 0.5 IOMAX = 8.5 A rms For an FA-type capacitor with 2700 µF capacitance and 10 V voltage rating, the ESR is 34 m Ω and the allowed ripple current at 100 kHz is 1.94 A. At +105 °C, at least five such capacitors must be connected in parallel to handle the calculated ripple current. At +50 °C ambient, however, a higher ripple current can be tolerated, so three capacitors in parallel are adequate. The ripple voltage across the capacitors is: VCINRPL = IOMAX [ESRIN/3 +DMAXHF/(3 CIN fMIN )] = 170 mV p-p To further reduce the effect of the ripple voltage on the system supply voltage bus and to reduce the input-current di/dt to below the recommended maximum of 0.1 A/ µs, an additional small inductor (L > 1.7 µH @ 10 A) should be inserted between the converter and the supply bus (see Figure 2). Feedback Loop Compensation Design for Active Voltage Positioning Optimized compensation of the ADP3154 allows the best pos- sible containment of the peak-to-peak output voltage deviation. Any practical switching power converter is inherently limited by the inductor in its output current slew rate to a value much less than the slew rate of the load. Therefore, any sudden change of load current will initially flow through the output capacitors, and this will produce an output voltage deviation equal to the ESR of the output capacitor array times the load current change. To correctly implement active voltage positioning, the low fre- quency output impedance (i.e., the output resistance) of the converter should be made equal to the maximum ESR of the output capacitor array. This can be achieved by having a single pole roll-off of the voltage gain of the gm error amplifier, where the pole frequency coincides with the ESR zero of the output capacitor. A gain with single pole roll-off requires that the gm amplifier output pin be terminated by the parallel combination The RDS(ON) for each FET can be derived from the allowable dissipation. If 5% of the maximum output power is allowed for FET dissipation, the total dissipation will be: PFETALL = 0.05 VOIOMAX = 1.7 W Allocating half of the total dissipation for the high side FET and half for the low side FET, the required minimum FET resis- tances will be: RDS(ON)HSF(MIN) = 0.85 W/(11.6 A) 2 = 6 m Ω RDS(ON)LSF(MIN) = 0.85 W/(12.5 A) 2 = 5.5 m Ω Note that there is a trade-off between converter efficiency and cost. Larger FETs reduce the conduction losses and allow higher efficiency, but increase the system cost. If efficiency is not a major concern, the International Rectifier IRL3803 is an economical choice for both the high side and low side positions. Those devices have an RDS(ON) of 6 m Ω at V GS = 10 V and at +25 °C. The low side FET is turned on with at least 10 V. The high side FET, however, is turned on with only 12 V – 5 V = 7 V. The specified RDS(ON) at the expected highest FET junction temperature of +140 °C must be modified by: RDS(ON)MULT = 1.7 Using this multiplier, the expected RDS(ON) at +140 °C is 1.7 × 6 m Ω = 10 mΩ. The high side FET dissipation is: PDFETHS = IRMSHS 2R DS(ON) + 0.5 VINILPEAKQGfMIN/IG ~ 2.3 W where the second term represents the turn-off loss of the FET. (In the second term, QGS is the gate charge to be removed from the gate for turn-off and IG is the gate current. From the data sheet, QGS is 41 nC and the peak gate drive current provided by the ADP3154 is about 1 A.) The low side FET dissipation is: PDFETLS = IRMSLS 2 R DS(ON) = 1.6 W (Note that there are no switching losses in the low side FET.) To maintain an acceptable MOSFET junction temperature, proper heat sinks should be used. The Thermalloy 6030 heat sink has a thermal impedance of 13 °C/W with convection cool- ing. With this heat sink, the junction-to-ambient thermal imped- ance of the chosen high side FET θ JAHS will be 13 °C/W (heat sink-to-ambient) + 2 °C/W (junction-to-case) + 0.5°C/W (case- to-heat sink) = 15.5 °C/W. At full load, and at +50 °C ambient temperature, the junction temperature of the high side FET is: TJHSMAX = TA + θJAHS PDFETHS = +86°C The same heat sink may be used for the low side FET, e.g., the Thermalloy type 7141 ( θ = 20.3°C/W). With this heat sink, the junction temperature of the low side FET is: TJLSMAX = TA + θJALS PDFETLS = +82.5°C All of the above-calculated junction temperatures are safely below the +175 °C maximum specified junction temperature of the selected FETs. |
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