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ADP3402 Datasheet(PDF) 9 Page - Analog Devices |
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ADP3402 Datasheet(HTML) 9 Page - Analog Devices |
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9 / 12 page ![]() ADP3402 –9– REV. 0 ANALOG GND DIGITAL AND SIM GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 2.2 F 100nF 28 27 26 25 23 22 21 20 19 18 17 16 15 ADP3402 100 10 F R1 CHARGER INPUT R2 CAPACITOR-TYPE BACKUP COIN CELL 10 F SIM PIN OF GSM PROCESSOR 2.2 F 10 F 24 0.22 F 100nF 10 F CLK TO SIMCARD RST TO SIMCARD I/O TO SIM CARD 100nF 1 Li-ION OR 3 NiMH CELLS GSM PROCESSOR GSM PROCESSOR VBAT VCC PWRONKEY ANALOGON PWRONIN ROWX CHRON VRTC CAP– SIMBAT DATAIO RESETIN CLKIN SIMGND AGND VCCA REFOUT VTCXO DGND RESCAP CAP+ VSIM CLK SIMON SIMPROG RST I/O RESET Figure 15. Typical Application Circuit FREQUENCY – Hz 600 500 0 10 100k 100 1k 10k 400 300 200 100 FULL LOAD MLCC CAPS VCCA TCXO REF Figure 14. Output Noise Density THEORY OF OPERATION The ADP3402 is a power management chip optimized for use with GSM baseband chipsets in handset applications. Figure 1 shows a block diagram of the ADP3402. The ADP3402 contains several blocks: • Four Low Dropout Regulators (Digital, Analog, Crystal Oscillator, Real-Time Clock) • Reset Generator • Buffered Precision Reference • SIM Interface Logic Level Translation (3 V/5 V) • SIM Voltage Supply • Power On/Off Logic • Undervoltage Lockout These functions have traditionally been done either as a discrete implementation or as a custom ASIC design. ADP3402 combines the benefits of both worlds by providing an integrated standard product solution where every block is optimized to operate in a GSM environment while maintaining a cost competitive solution. Figure 15 shows the external circuitry associated with the ADP3402. Only a few support components, mainly decoupling capacitors, are required. Input Voltage The input voltage range for ADP3402 is 3 V to 7 V and optimized for a single Li-Ion cell or three NiMH/NiCd cells. The ADP3402 uses Analog Devices’ patented package thermal enhancement tech- nology, which allows 15% improvement in power handling capabil- ity over standard plastic packages. The thermal impedance ( θ JA) of the ADP3402 is 60 °C/W. The charging voltage for a high capacity NiMH cell can be as high as 5.5 V. Power dissipation should be calculated at maximum ambient temperatures and battery voltage in order not to exceed the 125 °C maximum allowable junction tem- perature. Figure 16 shows the maximum total LDO output current as a function of ambient temperature and battery voltage. However, high battery voltages normally occur only when the battery is being charged and the handset is not in conversation mode. In this mode there is a relatively light load on the LDOs. A fully charged Li-Ion battery is 4.25 V, where the LDOs deliver the maximum 240 mA up to the max 85 °C ambient temperature. |
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