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AMP02FS Datasheet(PDF) 2 Page - Analog Devices |
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AMP02FS Datasheet(HTML) 2 Page - Analog Devices |
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2 / 12 page  AMP02E AMP02F Parameter Symbol Conditions Min Typ Max Min Typ Max Units OFFSET VOLTAGE Input Offset Voltage VIOS TA = +25°C 20 100 40 200 µV –40 °C ≤ T A ≤ +85°C 50 200 100 350 µV Input Offset Voltage Drift TCVIOS –40 °C ≤ T A ≤ +85°C 0.5 2 1 4 µV/°C Output Offset Voltage VOOS TA = +25°C1 4 2 8 mV –40 °C ≤ T A ≤ +85°C4 10 9 20 mV Output Offset Voltage Drift TCVOOS –40 °C ≤ T A ≤ +85°C 50 100 100 200 µV/°C Power Supply Rejection PSR VS = ± 4.8 V to ± 18 V G = 100, 1000 115 125 110 115 dB G = 10 100 110 95 100 dB G = 1 80 90 75 80 dB VS = ± 4.8 V to ± 18 V –40 °C ≤ T A ≤ +85°C G = 1000, 100 110 120 105 110 dB G = 10 95 110 90 95 dB G = 1 75 90 70 75 dB INPUT CURRENT Input Bias Current IB TA = +25°C2 10 4 20 nA Input Bias Current Drift TCIB –40 °C ≤ T A ≤ +85°C 150 250 pA/ °C Input Offset Current IOS TA = +25°C 1.2 5 2 10 nA Input Offset Current Drift TCIOS –40 °C ≤ T A ≤ +85°C 9 15 pA/ °C INPUT Input Resistance RIN Differential, G ≤ 1000 10 10 G Ω Common-Mode, G = 1000 16.5 16.5 G Ω Input Voltage Range IVR TA = +25°C (Note 1) ±11 ±11 V Common-Mode Rejection CMR VCM = ± 11 V G = 1000, 100 115 120 110 115 dB G = 10 100 115 95 110 dB G = 1 80 95 75 90 dB VCM = ± 11 V –40 °C ≤ T A ≤ +85°C G = 100, 1000 110 120 105 115 dB G = 10 95 110 90 105 dB G = 1 75 90 70 85 dB GAIN Gain Equation G = 1000 0.50 0.70 % Accuracy G = 50 k Ω +1 G = 100 0.30 0.50 % RG G = 10 0.25 0.40 % G = 1 0.02 0.05 % Gain Range G 1 10k 1 10k V/V Nonlinearity G = 1 to 1000 0.006 0.006 % Temperature Coefficient GTC 1 ≤ G ≤ 1000 (Notes 2, 3) 20 50 20 50 ppm/ °C OUTPUT RATING Output Voltage Swing VOUT TA = +25°C, RL = 1 kΩ± 12 ±13 ±12 ±13 V RL = 1 kΩ, –40°C ≤ TA ≤ +85°C ±11 ±12 ±11 ±12 V Positive Current Limit Output-to-Ground Short 22 22 mA Negative Current Limit Output-to-Ground Short 32 32 mA NOISE Voltage Density, RTI en fO = 1 kHz G = 1000 9 9 nV/ √Hz G = 100 10 10 nV/ √Hz G = 10 18 18 nV/ √Hz G = 1 120 120 nV/ √Hz Noise Current Density, RTI in fO = 1 kHz, G = 1000 0.4 0.4 pA/ √Hz Input Noise Voltage en p-p 0.1 Hz to 10 Hz G = 1000 0.4 0.4 µV p-p G = 100 0.5 0.5 µV p-p G = 10 1.2 1.2 µV p-p DYNAMIC RESPONSE Small-Signal Bandwidth BW G = 1 1200 1200 kHz (–3 dB) G = 10 300 300 kHz G = 100, 1000 200 200 kHz Slew Rate SR G = 10, RL = 1 kΩ 46 4 6 V/ µs Settling Time tS To 0.01% ±10 V Step G = 1 to 1000 10 10 µs SENSE INPUT Input Resistance RIN 25 25 k Ω Voltage Range ±11 ±11 V REFERENCE INPUT Input Resistance RIN 50 50 k Ω Voltage Range ±11 ±11 V Gain to Output 1 1 V/V REV. D –2– AMP02–SPECIFICATIONS ELECTRICAL CHARACTERISTICS (@ V S = 15 V, VCM = 0 V, TA = +25 C, unless otherwise noted.) |
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