CSD17552Q3A datasheet(2/12 Pages) TI

2 / 12 page

CSD17552Q3A

SLPS387 – SEPTEMBER 2012

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Static Characteristics

BVDSS

Drain to Source Voltage

VGS = 0V, ID = 250μA

IDSS

Drain to Source Leakage Current

VGS = 0V, VDS = 24V

μA

IGSS

Gate to Source Leakage Current

VDS = 0V, VGS = 20V

100

VGS(th)

Gate to Source Threshold Voltage

VDS = VGS, ID = 250μA

1.1

1.5

1.9

VGS = 4.5V, ID = 11A

6.5

8.1

Ω

RDS(on)

Drain to Source On Resistance

VGS = 10V, ID = 11A

5.5

6.0

Ω

gfs

Transconductance

VDS = 15V, ID = 11A

106

Dynamic Characteristics

Ciss

Input Capacitance

1580

2050

Coss

Output Capacitance

VGS = 0V, VDS = 15V, f = 1MHz

385

500

Crss

Reverse Transfer Capacitance

Series Gate Resistance

1.8

Ω

Gate Charge Total (4.5V)

Qgd

Gate Charge Gate to Drain

2.3

VDS = 15V, ID = 11A

Qgs

Gate Charge Gate to Source

3.6

Qg(th)

Gate Charge at Vth

1.8

Qoss

Output Charge

VDS = 15V, VGS = 0V

td(on)

Turn On Delay Time

7.2

Rise Time

7.4

VDS = 15V, VGS = 4.5V,

IDS = 11A, RG = 2Ω

td(off)

Turn Off Delay Time

11.0

Fall Time

3.4

Diode Characteristics

VSD

Diode Forward Voltage

ISD = 11A, VGS = 0V

0.8

Qrr

Reverse Recovery Charge

VDS= 13.5V, IF = 11A,

di/dt = 300A/

μs

trr

Reverse Recovery Time

THERMAL CHARACTERISTICS

(TA = 25°C unless otherwise stated)

PARAMETER

MIN

TYP

MAX

UNIT

RθJC

Thermal Resistance Junction to Case(1)

2.3

°C/W

RθJA

Thermal Resistance Junction to Ambient(1)(2)

°C/W

(1)

RθJC is determined with the device mounted on a 1-inch

2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm ×

3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.

(2)

Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.

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