CSD18532KCS datasheet(4/10 Pages) TI

4 / 10 page

0.3

0.6

0.9

1.2

1.5

1.8

2.1

2.4

−75

−25

125

175

TC - Case Temperature (ºC)

VGS = 4.5V

VGS = 10V

ID =100A

G001

0.0001

0.001

0.01

0.1

100

0.2

0.4

0.6

0.8

VSD − Source-to-Drain Voltage (V)

TC = 25°C

TC = 125°C

G001

0.5

0.8

1.1

1.4

1.7

2.3

2.5

−75

−25

125

175

TC - Case Temperature (ºC)

ID = 250uA

G001

VGS - Gate-to- Source Voltage (V)

TC = 25°C Id = 100A

TC = 125ºC Id = 100A

G001

Qg - Gate Charge (nC)

ID = 100A

VDS = 30V

G001

100

1000

10000

50000

VDS - Drain-to-Source Voltage (V)

Ciss = Cgd + Cgs

Coss = Cds + Cgd

Crss = Cgd

G001

CSD18532KCS

SLPS361A – AUGUST 2012 – REVISED OCTOBER 2012

www.ti.com

TYPICAL MOSFET CHARACTERISTICS (continued)

(TA = 25°C unless otherwise stated)

TEXT ADDED FOR SPACING

Figure 5. Gate Charge

Figure 6. Capacitance

TEXT ADDED FOR SPACING

Figure 7. Threshold Voltage vs. Temperature

Figure 8. On-State Resistance vs. Gate-to-Source Voltage

TEXT ADDED FOR SPACING

Figure 9. Normalized On-State Resistance vs. Temperature

Figure 10. Typical Diode Forward Voltage

Submit Documentation Feedback

Product Folder Links: CSD18532KCS

CSD18532KCS Datasheet(PDF) 4 Page - Texas Instruments

CSD18532KCS Datasheet(HTML) 4 Page - Texas Instruments

Html Pages

1 2 3 4 5 6 7 8 9 10

Datasheet Download

Link URL