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CSD18532KCS Datasheet(PDF) 1 Page - Texas Instruments |
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CSD18532KCS Datasheet(HTML) 1 Page - Texas Instruments |
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1 / 10 page  0 2 4 6 8 10 12 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to- Source Voltage (V) TC = 25°C Id = 100A TC = 125ºC Id = 100A G001 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 50 Qg - Gate Charge (nC) ID = 100A VDS = 30V G001 CSD18532KCS www.ti.com SLPS361A – AUGUST 2012 – REVISED OCTOBER 2012 60-V, N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18532KCS 1 FEATURES PRODUCT SUMMARY 2 • Ultra Low Qg and Qgd TA = 25°C TYPICAL VALUE UNIT • Low Thermal Resistance VDS Drain to Source Voltage 60 V • Avalanche Rated Qg Gate Charge Total (10V) 44 nC Qgd Gate Charge Gate to Drain 6.9 nC • Logic Level VGS = 4.5V 4.2 m Ω • Pb Free Terminal Plating RDS(on) Drain to Source On Resistance VGS = 10V 3.3 m Ω • RoHS Compliant VGS(th) Threshold Voltage 1.8 V • Halogen Free • TO-220 Plastic Package ORDERING INFORMATION Device Package Media Qty Ship APPLICATIONS TO-220 Plastic CSD18532KCS Tube 50 Tube Package • DC-DC Conversion • Secondary Side Synchronous Rectifier ABSOLUTE MAXIMUM RATINGS • Motor Control TA = 25°C VALUE UNIT VDS Drain to Source Voltage 60 V DESCRIPTION VGS Gate to Source Voltage ±20 V The NexFET™ power MOSFET has been designed Continuous Drain Current (Package limited), 100 to minimize losses in power conversion applications. TC = 25°C Continuous Drain Current (Silicon limited), ID 169 A TC = 25°C Figure 1. Top View Continuous Drain Current (Silicon limited), 107 TC = 100°C IDM Pulsed Drain Current (1) 179 A PD Power Dissipation 216 W TJ, Operating Junction and Storage –55 to 150 °C TSTG Temperature Range Avalanche Energy, single pulse EAS 281 mJ ID = 75A, L = 0.1mH, RG = 25Ω (1) Pulse duration ≤300μs, duty cycle ≤2% RDS(on) vs VGS GATE CHARGE 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2012, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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