ELECTRICAL SPECIFICATIONS

“E” Grade

“F” Grade

Parameter

Symbol

Conditions

Min Typ

Max

Min Typ

Max

Units

INPUT CHARACTERISTICS

Offset Voltage

OP193

75

150

µV

OP193, –40

°C ≤ T

A

≤ +125°C

175

250

µV

OP293

100

250

µV

OP293, –40

°C ≤ T

A

≤ +125°C

175

350

µV

OP493

125

275

µV

OP493, –40

°C ≤ T

A

≤ +125°C

225

375

µV

Input Bias Current

–40

°C ≤ T

20

nA

Input Offset Current

–40

°C ≤ T

A

≤ +125°C2

4

nA

Input Voltage Range

01

01

V

Large Signal Voltage Gain

Ω, 0.03 ≤ V

OUT

≤ 1 V

60

60

V/mV

–40

°C ≤ T

70

70

V/mV

Long Term Offset Voltage

Note 1

150

300

µV

POWER SUPPLY

Power Supply Rejection Ratio

PSRR

100

97

–40

°C ≤ T

9490dB

Supply Current/Amplifier

13.2 20

13.2 20

µA

–40

°C ≤ T

25

µA

Supply Voltage Range

+2

±18

+2

±18

V

NOISE PERFORMANCE

Voltage Noise Density

f = 1 kHz

65

65

nV/

√Hz

Current Noise Density

f = 1 kHz

0.05

0.05

pA/

√Hz

Voltage Noise

0.1 Hz to 10 Hz

3

3

µV p-p

DYNAMIC PERFORMANCE

Slew Rate

SR

10

10

V/ms

Gain Bandwidth Product

GBP

25

25

kHz

WAFER TEST LIMITS

Parameter

Symbol

Conditions

Limit

Units

Offset Voltage

±15 V, V

±75

µV max

±75

µV max

Input Bias Current

20

nA max

Input Offset Current

4

nA max

Input Voltage Range

1

0 to 4

V min

Common-Mode Rejection

CMRR

0

≤ V

CM

≤ 4 V

96

dB min

Power Supply Rejection Ratio

PSRR

±1.5 V to ±18 V

100

dB min

Large Signal Voltage Gain

100

V/mV min

Output Voltage Swing High

4.1

V min

Output Voltage Swing Low

400

mV max

Supply Current/Amplifier

25

µA max

NOTES

Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard

product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.

Specifications subject to change without notice.

OP193/OP293/OP493

REV. A

–5–