MAXIMUM RATINGS

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

V

I

DSS

I

GSS

g

fs

g

fs1

V

∆V

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

Zero Gate Voltage Drain Current (V

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Forward Transconductance (V

Forward Transconductance Ratio (V

Gate Threshold Voltage (V

Delta Gate Threshold Voltage (V

MIN

TYP

MAX

500

5

25

250

±100

35.8

0.9

1.1

3

5

0.1

UNIT

Volts

µA

nA

mhos

Volts

Symbol

V

DSS

V

DGO

I

D

V

GS

P

D

T

T

L

Parameter

Drain-Source Voltage

Drain-Gate Voltage

Continuous Drain Current @ T

Gate-Source Voltage

Total Device Dissipation @ T

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

ARF450

450

450

11

±30

650

-55 to 200

300

UNIT

Volts

Amps

Volts

Watts

°C

RF POWER MOSFET

N- CHANNEL ENHANCEMENT MODE

150V 500W 120MHz

The ARF450 is a matched pair of RF power transistors in a common source configuration. It is designed for push-pull

or parallel operation in scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.

•

Output Power = 500 Watts.

•

Gain = 13dB (Class C)

•

Efficiency = 75%

ARF450

Common Source

Push-Pull Pair

ARF450

BeO

11405

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

USA:

405 S.W. Columbia Street

Bend, Oregon 97702-1035

Phone: (541) 382-8028 FAX: (541)388 -0364

EUROPE:

Chemin de Magret

F-33700 Merignac - France

Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 9761

APT Website - http://www.advancedpower.com

THERMAL CHARACTERISTICS

Symbol

Characteristic (per package unless otherwise noted)

Junction to Case (per section)

MIN

TYP

MAX

0.54

0.1

UNIT

°C/W