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L7583A Datasheet(PDF) 4 Page - Agere Systems

Part # L7583A
Description  Line Card Access Switch
PDF  20 Pages
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Manufacturer  AGERE [Agere Systems]
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4
Lucent Technologies Inc.
Data Sheet
February 2001
L7583A/B/C/D Line Card Access Switch
Handling Precautions
Although protection circuitry has been designed into this device, proper precautions should be taken to avoid expo-
sure to electrostatic discharge (ESD) during handling and mounting. Lucent Technologies Microelectronics Group
employs a human-body model (HBM) and a charged-device model (CDM) for ESD-susceptibility testing and pro-
tection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used to define the
model. No industry-wide standard has been adopted for CDM. However, a standard HBM (resistance = 1500
Ω,
capacitance = 100 pF) is widely used and therefore can be used for comparison purposes. The HBM ESD thresh-
old presented here was obtained by using these circuit parameters.
Table 3. HBM ESD Threshold Voltage
Electrical Characteristics
TA = –40 °C to +85 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are
the result of engineering evaluations. Typical values are for information purposes only and are not part of the test-
ing requirements.
Table 4. Power Supply Specifications
*VBAT is used only as a reference for internal protection circuitry. If VBAT rises above –10 V, the device will enter an all OFF state and remain in
this state until the battery voltage drops below –15 V.
Table 5. Test In Switches, 1 and 2
* Applied voltage is 100 Vp-p square wave at 100 Hz.
Device
Rating
L7583
1000 V
Supply
Min
Typ
Max
Unit
Supply
Min
Typ
Max
Unit
VDD
4.5
5
5.5
V
VBAT*
–19
—
–72
V
Parameter
Test Condition
Measure
Min Typ Max
Unit
OFF-state Leakage Current:
+25 °C
+85 °C
–40 °C
Vswitch (differential) = –320 V to Gnd
Vswitch (differential) = –60 V to +260 V
Vswitch (differential) = –330 V to Gnd
Vswitch (differential) = –60 V to +270 V
Vswitch (differential) = –310 V to Gnd
Vswitch (differential) = –60 V to +250 V
Iswitch
Iswitch
Iswitch
—
—
—
—
—
—
1
1
1
µA
µA
µA
ON-resistance:
+25 °C
+85 °C
–40 °C
Iswitch (on) = ±5 mA, ±10 mA
Iswitch (on) = ±5 mA, ±10 mA
Iswitch (on) = ±5 mA, ±10 mA
∆ VON
∆ VON
∆ VON
—
—
—
45
—
33
—
70
—
Ω
Ω
Ω
Isolation:
+25 °C
+85 °C
–40 °C
Vswitch (both poles) = ±320 V,
Logic inputs = Gnd
Vswitch (both poles) = ±330 V,
Logic inputs = Gnd
Vswitch (both poles) = ±310 V,
Logic inputs = Gnd
Iswitch
Iswitch
Iswitch
—
—
—
—
—
—
1
1
1
µA
µA
µA
dV/dt Sensitivity*
——
—
200
—
V/µs



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