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GR101 Datasheet(PDF) 4 Page - Seoul Semiconductor |
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GR101 Datasheet(HTML) 4 Page - Seoul Semiconductor |
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4 / 13 page ![]() 서식번호 : SSC- QP- 7- 07- 25 (Rev.0.0) Rev. 02 Rev. 02 January 2012 January 2012 WWW.SEOULSEMICON.COM WWW.SEOULSEMICON.COM 2. Absolute maximum ratings 3. Electro-Optical Characteristics ℃ -40 ~ 100 T stg. Storage Temperature V 5 V R Reverse Voltage mW 75 P d Power Dissipation ℃ -40 ~ 85 T opr. Operating Temperature mA 100 I FM *1 Peak Forward Current mA 30 I F Forward Current Unit Value Symbol Parameter nm 572 570 566 I F=20㎃ λ d Wavelength Luminous Intensity*2 uA 10 - - V R=5V I R Reverse Current nm - 28 - I F=20㎃ Δλ mcd 36 25 18 I F=20㎃ Iv Spectral Bandwidth ˚ - 140 - I F=20㎃ 2 θ 1/2 Viewing Angle*3 (Y) 2.0 Min 2.5 Max 2.2 Typ V I F=20㎃ V F Forward Voltage Unit Condition Symbol Parameter *1 I FM conditions: Pulse width Tw≤ 1msec and Duty ratio≤1/10. *2 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package. *3 θ1/2 is the off-axis where the luminous intensity is 1/2 the peak intensity. (Ta=25 ℃ ℃ ℃ ℃) (Ta=25 ℃ ℃ ℃ ℃) [Note] All measurements were made under the standardized environment of SSC. (Tolerance : I v ± 10 %, λd ± 2 nm, VF ± 0.1 V) |
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