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HB601R Datasheet(PDF) 4 Page - Seoul Semiconductor

Part # HB601R
Description  2.1*1.0*0.6 mm Side Type Wavelength: 470nm
PDF  12 Pages
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Manufacturer  SEOUL [Seoul Semiconductor]
Direct Link  http://www.seoulsemicon.com
Logo SEOUL - Seoul Semiconductor

HB601R Datasheet(HTML) 4 Page - Seoul Semiconductor

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Document No. : SSC-QP-7-07-24 (Rev.00)
Rev.01
Rev.01
December 2010
December 2010
www.seoulsemicon.com
www.seoulsemicon.com
2. Absolute maximum ratings
3. Electro-Optical Characteristics
*1 I
FM conditions: Pulse width Tw≤0.1ms and Duty ratio≤1/10
(Ta=25℃)
(Ta=25℃)
Parameter
Symbol
Value
Unit
Power Dissipation
P
d
64
mW
Forward Current
I
F
20
mA
Peak Forward Current
I
FM
*1
50
mA
Reverse Voltage
V
R
5
V
Operation Temperature
T
opr.
-35 ~ 85
℃
Storage Temperature
T
stg.
-40 ~ 100
℃
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Forward Voltage
V
F
I
F=5 ㎃
2.7
3.05
3.2
V
Reverse Current
I
R
V
R=5V
-
-
10
㎂
Luminous Intensity*2
I
V
I
F=5 ㎃
14
17
40
mcd
Wavelength
λ
d
I
F=5 ㎃
466
470
475
nm
Spectral Bandwidth
Δλ
I
F=5 ㎃
-
25
-
nm
Viewing Angle*3
2θ
1/2
I
F=5 ㎃
-
120
-
˚
*2 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the
LED package.
*3 θ
1/2 is the off-axis where the luminous intensity is 1/2 the peak intensity.
[Note] All products confirm to the listed minimum and maximum specifications for electric and optical characteristics, when operated at
20mA within the maximum ratings shown above. All measurements were made under the standardized environment of SSC.
(Tolerance : I
v ±10 %, λD ±2 nm, VF ±0.1 V)



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