STP10P6F6 datasheet(1/15 Pages) STMICROELECTRONICS

Part #	STP10P6F6

Description	P-channel 60 V, 0.15 廓 typ., 10 A STripFET??VI DeepGATE??Power MOSFET in DPAK and TO-220 packages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 15 page

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

June 2012

Doc ID 022967 Rev 2

1/15

15

STD10P6F6,

STP10P6F6

P-channel 60 V, 0.15

Ω typ., 10 A STripFET™ VI DeepGATE™

Power MOSFET in DPAK and TO-220 packages

Datasheet — preliminary data

Features

■ RDS(on) * Qg industry benchmark

■ Extremely low on-resistance RDS(on)

■ High avalanche ruggedness

■ Low gate drive power losses

Applications

■ Switching applications

Description

These devices are P-channel Power MOSFETs

developed using the 6th generation of STripFET™

DeepGATE™ technology, with a new gate

structure. The resulting Power MOSFETs exhibits

the lowest RDS(on) in all packages.

Figure 1.

Internal schematic diagram

Note:

For the P-channel Power MOSFET the actual polarity of the voltages and the current must

be reversed.

Order codes

VDSS

RDS(on) max

ID

STD10P6F6

60 V

0.18

Ω

10 A

STP10P6F6

60 V

0.18

Ω

10 A

DPAK

1

3

1

2

3

TO-220

AM11258v1

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STD10P6F6

10P6F6

DPAK

Tape and reel

STP10P6F6

10P6F6

TO-220

Tube

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